平面型硅阴极发射稳定性研究

Emission Stability Research ofA Flat Silicon Cathode

  • 摘要: 平面电子管器件的阴极发射稳定性、可持续性和可靠性是器件实际应用前需要解决的关键问题。本文对空气和真空环境中平面型硅阴极的长时间发射特性进行了系统的测量和分析。实验结果发现,在空气环境中,阴极存在一个约1 h的电流稳定过程,而真空中的样品不存在这样的过程。研究还发现器件关断后放置在空气环境中会导致重新开启后电流衰减。此外,使用透射电子显微镜(TEM)观察平面型硅阴极表面的微观结构,发现长时间发射后阴极表面部分区域变得粗糙且高度下降了5~6 nm。本文的研究结果有助于提高研究者们对平面电子管器件失效机理的认识,并为平面型硅阴极的平面电子管器件设计和应用提供有价值的指导。

     

    Abstract: The emission stability, sustainability and reliability of cathodes are among key issues to be solved before the practical application of planar electron tube devices. In this article, the long-term continuous emission characteristics of a flat silicon cathode have been measured and analyzed in air and vacuum environment systematically. A stabilization process of about an hour exists for all samples in air while no such a process exists for samples in vacuum. The current sustainability between turn-on states has also been studied and the air ambient during turn-off states is found to be the main reason of emission un-sustainability. In addition, the microstructure features of the flat-type silicon cathode have also been revealed by TEM observation. A height drop of 5~6 nm on the silicon surface is observed along with obvious roughness in the emission area. The results in this work will help researchers improving the understanding of failure mechanisms in planar electron tube devices, and provide valuable guidelines for the design and operation of planar electron tube devices with flat-type silicon cathodes.

     

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