Abstract: Based on first-principles calculations, cubic boron arsenide (c-BAs) is predicted to possess an ultrahigh thermal conductivity(1400W/m^*K), second only to diamond, making it an excellent candidate for efficient heat management.The discovery of c-BAs has had a significant impact on thermal dissipation applications in electronic devices, making it a current research hotspot.In recent years, highquality single crystals of BAs have been successfully synthesized using chemical vapor transport (Chemical vapor transmission, CVT) method, providing an experimental foundation for investigating its properties.BAs crystals have demonstrated outstanding thermal conductivity and bipolar transport characteristics in experiments, making them the best-known semiconductor material in terms of performance and holding potential for the next generation of semiconductors.This article provides an overview of the research progress in growth methods, theoretical calculations, and physical properties of BAs single crystals.Furthermore, we discusses the current technological challenges and prospects for the development of BAs crystals.