Abstract: In this work, the ITO/ZrO₂ (Ag)/TiN memristor devices were prepared by magnetron sputtering method on In₂O₃ doped SnO₂(ITO) substrate, and Ag-doped ZrO₂was used as their functional layers.The performance of these memristors varies significantly before and after annealing, with a maximum switching ratio of 112 after annealing at 500 ℃for 60 minutes, and it still maintains stability of over 5000+ s after long-term storage.By analyzing and fitting the current voltage (I-V) curve, a physical model based on Space charge limited current (SCLC) mechanism and Schottky emission mechanism is proposed to explain the Reset/Set (RS) memory behavior of these memristors.The effect of annealing on the microstructure and morphology of the memristors were analyzed by X-ray diffraction(XRD) and scanning electron microscopy (SEM), indicating that the crystallinity of the thin film Ag increased and the peak intensity ratio changed after annealing.The results indicate that thin films prepared by magnetron sputtering usually have a large number of defects, and annealing treatment can reduce the defects of the sputtered thin films, improve the stability and switching ratio of the devices.