Abstract: Gold-gold hot pressing bonding technology, due to the lower requirements for bonding temperature and bonding surface, has attracted much attention in the manufacturing process of micro mechanical and electronic (MEMS) devices, especially in MEMS wafer-level packaging technology.In this report, a gold-gold hot-pressing bonding scheme is proposed, and the effects of bonding process and surface activation on bonding quality are studied; The bonding process was further optimized and the bonding quality of the discs was evaluated by shear force testing.The test results show that after 20 seconds of O₂ plasma treatment, the maximum bonding strength of 31.586 MPa can be obtained by using the 501 bonding table of EVG under the condition of 340 ℃/2500N for 20min.The research in this report provides technical support for the wafer-level packaging process of MEMS devices.