Abstract: Two-dimensional（2D） wide bandgap materials will play an important role in the production of the next generation of new electronic devices. Wide bandgap gallium oxide crystals have a non-layered structure and are difficult to be made into 2D materials via traditional preparation methods, such as mechanical exfoliation. Here, the large-scale ultra-thin gallium oxide film was fabricated by squeezing liquid metal gallium. The size of the film is on the centimeter-scale and its thickness is ～5.6 nm. The thickness uniformity and edge regularity of 2D gallium oxide films can be improved by selecting the liquid gallium with an appropriate size. A larger 2D gallium oxide film can be prepared by squeezing multiple liquid gallium droplets. The transmission electron microscopy and Raman results confirm that the fabricated material is the amorphous Ga₂O₃ film. The electrical results show that the ultrasonic cleaning can remove the residual gallium on the surface of the 2D gallium oxide and improve the insulativity of the film. The 2D gallium oxide with excellent insulativity is suitable for photodetectors and some electrical devices requiring insulating materials.