基于无氟MOD法制备GdBCO超导薄膜的外延生长研究

Epitaxial growth of superconducting GdBCO thin films prepared by fluorine-free MOD method

  • 摘要: 因为环境友好和生长速率高的优势,无氟金属有机盐沉积技术(FF-MOD)制备高质量的REBCO超导薄膜受到了广泛的关注。本文通过已经建立的FF-MOD制备超导薄膜的形核和生长模型,阐明了FF-MOD法制备超导薄膜的形核和生长的过程,该过程主要受到瞬时液相和界面反应产生的BaCeO3的影响。瞬时液相有助于薄膜的形核和生长,而BaCeO3的产生,则会抑制薄膜的生长,降低薄膜的质量。通过优化氧分压、烧结温度和保温时间等烧结参数,在镀有CeO2帽层(Cap layer)的金属基底上成功制备了临界电流密度(Jc)高达2.8 MA/cm2(77 K,自场)的GdBCO超导薄膜。这项工作证明了通过FF-MOD在柔性金属基带上制造高性能GdBCO超导薄膜的可行性,为下一步提高薄膜的在场性能和制备高质量的超导接头提供依据。

     

    Abstract: On account of the excellent characteristics of environmentally friendly and high growth rate, the growth of high-quality GdBCO superconducting films by fluorine-free metal-organic deposition method(FF-MOD) has attracted extensive attention. The nucleation and growth process of GdBCO superconducting film is explained by the nucleation and growth model on CeO2 technical substrate. The process is mainly related to the transient liquid phase and the BaCeO3 produced by the interface reaction. The transient liquid phase is beneficial to the nucleation and growth of the film, while the production of BaCeO3 will inhibit the growth and reduce the quality of the film. By system optimization of sintering parameters such as oxygen partial pressure, sintering temperature, holding time, etc., affect the structure and superconducting properties of GdBCO films. Remarkably, a high critical current density(Jc) value of 2.8 MA/cm2(77 K, s.f.) was obtained in the GdBCO film grown on the metal substrate with CeO2 cap layer under optimized deposition conditions. This work proves the feasibility of fabrication of high-performance GdBCO films on flexible metal substrates through FF-MOD and provides a guideline for improving the field performance of the films and prepare high-quality superconducting joints.

     

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