Abstract: With the background of manufacturing SiC MOSFET devices, the Al contact hole fill process was studied experimentally, and the parameters such as sputtering temperature, power, target spacing in magnetron sputtering and optimizing etching angle on the fill effect of contact hole were analyzed. When the target spacing is set at 5 500 step, the filling height can be increased from 1.487 μm to 1.780 μm; when wet etch and dry etch are used to optimize the etching angle, the fill effect is the best, and the filling height can be increased to 2.72 μm, which provides a reference direction for parameter setting and process debugging in actual engineering application.