Abstract: Transition metal dichalcogenides (TMDCs), represented by MoS₂, are ideal candidates for the development of next-generation high-performance optoelectronic devices due to their unique electronic structure, excellent semiconductor properties, tunable band gap (1.3-1.8eV), high mobility and strong photo-electric interactions.However, the unique interlayer van der Waals gap of 2D materials makes it impossible to achieve uniform and stable doping by conventional semiconductor doping methods, such as diffusion and injection, and cannot effectively modulate the performance of their associated electronic devices.The traditional “3D” semiconductor-based p-n junction is the fundamental blocks of modern electronic devices, integrating 2D layered MoS₂ into conventional semiconductor materials has become one of the strategies to enhance device performance and explore new functionalities.The semiconductor ZnO, with 3.37eV bandgap and superior optoelectronic properties, has been widely used in high efficiency short wavelength detection, light emitting and laser devices as well as smart devices.In recent years, the study of heterojunction structures with MoS₂ and ZnO has become an attractive topic, and many studies have been reported that the MoS₂/ZnO heterostructures can effectively improve the photoresponsivity, response range and response speed of photodetectors, demonstrating good performance.This paper reviews various methods of preparing MoS₂/ZnO heterojunction structures, physical mechanisms of carries transport at the heterojunction interfaces, and the research progress in photodetectors.