Abstract: With the progression of integrated circuit technology into the nanoscale domain, conventional copper interconnects encounter growing challenges. These include increased resistivity due to size-dependent effects and electromigration-induced failures, which contribute to higher line resistance. Additionally, the rise in line-to-line and interlayer capacitance, compounded by the limitations of low-k dielectric materials, results in heightened parasitic capacitance and a corresponding degradation of interconnect RC delay. In response to these challenges, there is an urgent demand for innovative interconnect materials and refined processing techniques to enhance interconnect performance. Ruthenium (Ru), recognized as a promising candidate for next-generation interconnects, presents several inherent advantages at the nanoscale. Its short electron mean free path and high cohesive energy confer reduced resistivity scaling effects and superior electromigration resistance. Furthermore, Ru demonstrates excellent interfacial stability, eliminating the necessity for diffusion barrier layers. From a process integration standpoint, Ru facilitates dry etching-based patterning, ensuring compatibility with semi-damascene processes and air-gap structures, thus aiding in the reduction of both interconnect resistance and parasitic capacitance. This paper provides a comprehensive review of the quantum transport mechanisms of Ru at the nanoscale, recent advancements in deposition technologies, and integration strategies, offering theoretical insights and technological pathways for the advancement of post-Cu interconnect solutions.