Abstract: The HfO₂-based ferroelectric thin film has become a research hotspot in recent years because of its excellent polarization characteristics, miniaturization and high compatibility with complementary metal oxide semiconductor（CMOS） technology. Hf_0.5Zr_0.5O₂（HZO） thin films deposited by atomic layer deposition（ALD） show the ferroelectricity after rapid thermal process（RTP） with the stress of top and bottom electrodes. In this paper, the effects of different rapid thermal processing temperatures on the structure and properties of HZO film were studied. It was found that the deposited HZO film is amorphous, and it crystallized through rapid thermal process. Comparing the ferroelectric test results of capacitor units with rapid thermal process temperature of 500 ℃ and 600 ℃, it is found that the residual polarization（P_r） and coercive electric field（E_c） of HZO capacitor unit are larger when the HZO capacitor units annealed at 600 ℃. Besides, the cross-section structure of the capacitor units with rapid thermal process temperature of 500 ℃ and 600 ℃ were analyzed. Results imply that tetragonal phases and orthonormal phases appear through rapid thermal processing at 500 ℃, while monoclinic phases and orthonormal phases appear after annealing at 600 ℃.