High-stability In₂O₃/InGaZnO dual-channel thin-film transistors

This study proposes and fabricates an In₂O₃/IGZO dual-channel TFT. The results indicate that the bilayer device exhibits excellent electrical characteristics and stability, including a high field-effect mobility of 26.8 cm²·(V·s)⁻¹ and an ultralow subthreshold swing of 90.8 mV·dec⁻¹. The threshold voltage shifts under positive bias stress and negative bias stress are only 29.6 mV and −89.3 mV, respectively. After 50 d of storage in a humid environment, no significant degradation in electrical performance is observed. These outstanding electrical properties and stability are attributed to the high-quality interface formed between the physical-vapor-deposited IGZO layer and the atomic-layer-deposited In₂O₃ layer. Furthermore, the IGZO layer effectively prevents the interaction between environmental moisture/oxygen and the In₂O₃ layer. The proposed dual-channel technology offers an effective solution for achieving high-performance oxide thin-film transistors, demonstrating considerable application potential in advanced electronic devices.