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Research progress of high precision and selective atomic layer etching technology
OUYANG Yi, YAN Guanghui, CHEN Guoxiang, HUANG Gaoshan, CHEN Xiangzhong, BAO Zhihao, SHI Jianjun, ZUO Xueqin, MEI Yongfeng
2025, 31(3): 145-159. DOI: 10.20027/j.gncq.2025.0022
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Application and challenges of ruthenium in nanoscale integrated circuit interconnects
MA Lan, WU Xiaohan, DING Shijin
2025, 31(3): 160-171. DOI: 10.20027/j.gncq.2025.0023
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Advances in atmospheric-pressure particle atomic layer deposition
YAN Guanghui, HUANG Gaoshan, LU Xueqiang, ZUO Xueqin, MI Dongdong, CHEN Guoxiang, OUYANG Yi, CHEN Xiangzhong, BAO Zhihao, MEI Yongfeng, SHI Jianjun
2025, 31(3): 172-188. DOI: 10.20027/j.gncq.2025.0021
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Research progress on borides growth based on atomic layer deposition technique
CHEN Pengyu, WEN Xintao, HU Zhichen, XI Bin
2025, 31(3): 189-199. DOI: 10.20027/j.gncq.2025.0018
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Research progress in numerical simulation of atomic layer deposition reactors
ZHANG Hangbo, YAN Yingping, WANG Linlin, CHEN Guohao, PING Huihui, ZHUANG Liwei
2025, 31(3): 200-212. DOI: 10.20027/j.gncq.2025.0019
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Advances in the application of atomic layer deposition in the preparation of optoelectronic devices
DONG Ce, JIANG Ning, WANG Guanran, WANG Jiawei, REN Jianyang, XIE Siyu, LI Ye, DUAN Yu
2025, 31(3): 213-230. DOI: 10.20027/j.gncq.2025.0017
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High-stability In2O3/InGaZnO dual-channel thin-film transistors
JU Shanshan, LI Jinxiong, LU Lei, ZHANG Shengdong, WANG Xinwei
2025, 31(3): 231-238. DOI: 10.20027/j.gncq.2025.0024
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Construction of low-voltage-operating FET with high performance based on InCaOx/HfAlOx and its application on logic inverter
XIA Yufeng, HE Gang
2025, 31(3): 239-246. DOI: 10.20027/j.gncq.2025.0020
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DFT-based precursor screening for selective atomic layer deposition on Cu/SiO2 substrates
GE Yi'ao, LI Boxuan, WEN Yanwei, CAO Kun, SHAN Bin, CHEN Rong
2025, 31(3): 247-260. DOI: 10.20027/j.gncq.2025.0025
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