Growing GaN film by using anodic aluminum oxide （AAO） mask

High quality GaN film was grown by hydride vapor phase epitaxy（HVPE） using porous AAO as mask.Scanning electron microscope（SEM） displays its cross-section morphology and cathode luminescence（CL） shows optical property at different positions of the as-grown layer.The optical property of GaN film improves with its thickness increasing.And the compressive stress in the GaN film is released by using AAO mask.