CENG Wen, LIN Zhi-dong, ZHANG Hong, AI Hua. Impacting mechanism of operating temperature of TiO2-based sensor[J]. Journal of Functional Materials and Devices, 2008, 14(6): 1044-1048.
Citation: CENG Wen, LIN Zhi-dong, ZHANG Hong, AI Hua. Impacting mechanism of operating temperature of TiO2-based sensor[J]. Journal of Functional Materials and Devices, 2008, 14(6): 1044-1048.

Impacting mechanism of operating temperature of TiO2-based sensor

  • Theory calculation for band structure of TiO2-based gas-sensing materials and the orbital energy level of tested gas molecules were carried out.The best operating temperatures of TiO2-SnO2 gas sensor to some gases were measured experimentally.The results show that there are some new energy bands in the band gap and the conductance band move towards lower energy state.These effects are beneficial to the electron excitated.When the operating temperature at 260℃,the resistance of TiO2-based gas sensor is 22.5MΩ,while for the non-doped TiO2 gas sensor is 44.5MΩ.When the lowest unoccupied orbital energies(ELUMO) of the tested gas decreased,the operating temperature of gas sensors dropped and the sensitivity increased as the reaction activation energy decreased.
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