| Citation: |
CHEN Peng-yu, WEN Xin-tao, HU Zhi-chen, XI Bin. Research progress on precursors for atomic layer deposition of borides[J]. Journal of Functional Materials and Devices.
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Borides have garnered extensive applications and in-depth research across multiple fields, with particular focus on boron oxide and boron nitride. As semiconductor technology continues to advance, the use of boron oxide in ultra-shallow silicon doping, especially in advanced CMOS technologies, is attracting increasing attention. Its unique doping characteristics demonstrate significant potential for optimizing device performance and enhancing integration density. Simultaneously, the importance of boron nitride in the field of semiconductor ferroelectric memory doping is becoming increasingly prominent. This article aims to review the latest research progress in boron oxide and boron nitride within the field of atomic layer deposition (ALD), introduce commonly used boron precursors and co-precursor materials, and focus on ALD-based growth techniques. The performance of related thin-film devices fabricated using these methods is also analyzed and reviewed. Based on these advancements, this paper explores future directions for the development of atomic layer deposition techniques for borides and provides valuable insights for research and development in the semiconductor industry.
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