WU Xiaorui, OUYANG Yi, SHI Jianjun, LU Xueqiang, ZUO Xueqin. Research Status and Development Trend of Area Selective Atomic Layer Deposition[J]. Journal of Functional Materials and Devices.
Citation: WU Xiaorui, OUYANG Yi, SHI Jianjun, LU Xueqiang, ZUO Xueqin. Research Status and Development Trend of Area Selective Atomic Layer Deposition[J]. Journal of Functional Materials and Devices.

Research Status and Development Trend of Area Selective Atomic Layer Deposition

  • In recent years, with manufacturing technology advancing into the atomic age, significant progress has been achieved in nano-manufacturing technologies. However, as the dimensions of manufacturing continue to decrease, the conventional “deposition-lithography-etching” nanofabrication process faces unprecedented challenges in terms of precision, efficiency, and cost. Given its advantages of high efficiency, precise control and selective deposition in targeted regions, area selective atomic layer deposition has emerged as a highly promising alternative to the traditional “deposition-lithography-etching” process. Based on the principles of area selective atomic layer deposition, this paper reviews the current status of its development, outlines its primary applications, and provides an outlook on the future advancements of this technology.
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