Effect of oxygen partial pressure on the Optical and Electrical properties of IMO thin films

Mo-doped Indium Oxide Thin films（IMO） were prepared on k9 glass substrates by radio frequency reactive magnetron sputtering.The effect of oxygen partial pressure on the optical and electrical properties of IMO thin films was studied.The results indicate that IMO thin films have different preferred orientation at different oxygen partial pressure.With the increase of the oxygen partial pressure,the carrier concentration and mobility of IMO thin film firstly increase and then decrease,but its resistivity shows an increase-derease-increase trend.The average optical transmittance of IMO films prepared in oxygen are over 80% in the visible and near infrared region and will increase with the oxygen partial pressure increasing.